Noble-gas ion bombardment on clean silicon surfaces
نویسندگان
چکیده
منابع مشابه
Craters on silicon surfaces created by gas cluster ion impacts
Atomic force microscopy ~AFM! and high-resolution transmission electron microscope ~HRTEM! cross section imaging of individual gas cluster ion impact craters on Si~100! and Si~111! substrate surfaces is examined. The comparison between 3 and 24 kV cluster impacts from Ar and O2 gas sources is shown. Results for low fluence (10 ions/cm) 24 kV Ar individual cluster impacts onto a Si~100! and Si~1...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 1988
ISSN: 0163-1829
DOI: 10.1103/physrevb.38.10556